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RN1106MFV,L3F

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RN1106MFV,L3F

Mfr.Part # : RN1106MFV,L3F

Manufacturer : Toshiba Electronic Devices and Storage Corporation

Description : TRANS PREBIAS NPN 50V 0.1A VESM

Stock : 3150

Product Category : Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) : 100 mA

Current - Collector Cutoff (Max) : 500nA

DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V

Mounting Type : Surface Mount

Package / Case : SOT-723

Power - Max : 150 mW

Product Status : Active

Resistor - Base (R1) : 4.7 kOhms

Resistor - Emitter Base (R2) : 47 kOhms

Supplier Device Package : VESM

Transistor Type : NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max) : 50 V

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